Wide Area Irradiation Optics

Manufacturer: DREEBIT GmbH
The Wide Area Irradiation Optics were developed for singly charged ion implantation with beams of max. 30 kV acceleration voltage, 10 mA beam current, and resulting energies of up 300 W into targets of 200 mm width.
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Description

The wide area irradiation optics were developed for singly charged ion implantation with beams of max. 30 kV acceleration voltage, 10 mA beam current, and resulting energies of up to 300 W irradiating targets of 200 mm width.

The first component of the setup is an electrostatic deflector for bending charged particle beams by an angle of up to ±10°. It consists of an einzel-lens-like cylinder electrode separated into two parts by a diagonal cut. With this geometry, the two electrodes can deflect a beam by a certain deflection voltage, i.e. a potential difference between the two electrode parts. Additionally, a lens effect can be created by a superimposed offset or lens voltage applied to both electrode parts.

The second element is dipole magnet for beam parallelization after deflection. It guarantees that the ion beam hits a potential target area parallel to the surface normal with very small deviation angles under 1° over the entire beam scanning width of 200 mm. Together with the specifically designed optical properties of the parallelization magnet, this allows for very precise control of the ion beam implantation parameters of a facility containing the Wide Area Irradiation Optics.

With this combined setup, the beam can be scanned over a target surface in one direction. If the target is moved perpendicular to beam incidence and scanning direction a homogenious ion implantation density can be achieved over a two dimensional area.

Large lens and magnet chamber dimensions as well as a replacable neutral beam dump allow for transportation of high ion beam currents up to 10 mA at up to 20 keV with beam diameters of up to 40 mm, as required for ion implantation purposes. Although the recent design of the wide area irradiation optics was optimized for 200 mm target width, the design principle can also be expanded to larger implantation areas.

The given figures demonstrate the functions of the electrostatic deector as well as the parallelization magnet system. The simulations were carried out using an ion beam virtually created by an electron cyclotron resonance ion source.

Parameters

Deflector Parameters
max. electrode voltage ±30 kV
max. deflection voltage (difference between electrodes) ±5 kV
inner lens diameter 100 mm
Magnet Parameters
bending radius of charged particle beam 500 mm
bending angle 45° ± 10°
pole shoe angle at beam entrance / exit 0° / 0° ± 10°
shape of pole shoe edges at beam entrance / exit approx. Rogowski
max. magnetic induction at ion trajectory 0.28 T
Combined Setup Parameters
max. beam scanning distance 250 mm
beam incidence angle 0° ± 1°
General Parameters
dimensions (length x width x height) ca. 1020 mm x 1040 mm x 890 mm
weight 520 kg (1150 lbs)
Infrastructural Requirements
cooling water one circuit, 1.5 l / min at 3 bar
vacuum conditions during operation HV, 1e-3 mbar and better

Scope of Delivery

  • deflector electrodes including vacuum chamber and high voltage feedthroughs
  • beamline element between deflector and magnet chamber
  • dipole magnet incl. magnet yoke, vacuum chamber, neutral beam dump, water cooled coils incl. connectors for attachment of water hoses

Optional Equipment

  • power supplies for operation of deflector and magnet incl. tailored cables
  • support stand for the setup incl. space to build in the power supplies
  • water flow meter to quarantee sufficient water cooling of the magnet
  • hall probe set to measure magnetic induction between the magnet poles
  • remote control hardware and software

Downloads

ProductSheet_WAIO.pdf

(797.63 KiB)


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